![]() This topic can be surprisingly confusing and I personally believe that it’s in large part due to the amount of terms, especially those that stand for the same thing, such as linear, triode, and ohmic to describe the same region. The rea-sons for this is described as, the hole mobility in silicon at normal led intensities is about 500 cm2(V:s). No matter what, you need to make sure that the source and drain are at equal or higher voltage potentials than the substrate or else you will forward bias that PN junction and get an unwanted current. in fabrication methods have led to the dominance of NMOS transistors. Third, in this example, we assumed that the substrate, or base, was connected to ground. These two features are very important when it comes to designing a MOSFET. (b) For the transistor to operate in the triode region, the drain voltage must be higher than the gate voltage by at least Vtp volts, thus. Second is the channel width, W - which is how long the source and drain are. The capacitor is then charged with another NMOS transistor T2. Example: A capacitor is discharged with an NMOS transistor T1, Figure 10. This is one of the reasons why we need PMOS transistors. First is the channel length, L - the distance between the source and drain. instance, that an NMOS-based electronic switch cannot be used to short a circuit with VDD (with positive supply). But there are a few things that I’d be remiss to not mention that can affect their operation. Conceptually, that’s all you need to know to understand the mechanics behind MOSFETs, everything basically stems from those operating principles.
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